Selective deposition of titanium disilicide
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چکیده
The titanium silicide thin films had been formed on Si substrate by reacting of TiX4 (X=Cl, Br) with Si under different experimental conditions. The Si consumption and the titanium silicide obtains were calculated by the film thickness. In some reactions, titanium silicide thin film was found not only on the Si substrates but also on the SiO2 wall at the outlet of the reaction chamber. The quantity of Si consumption and the quantity of silicon containing materials obtained on the wall of the deposition chamber varied as the reaction conditions were changed. The minimum Si consumption and the maximum titanium silicide obtains on silicon were the most favorable result. It was found in the reaction of TiBr4 with Si at 1000 . The metalization reactions were studied in detail and the reaction pathway was proposed.
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